1 emitter 2 base 3 collector features low collector saturation voltage. low output capacitance. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma collector dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 h fe classification marking rank o y g l hfe 70 140 120 240 200 400 300 700 c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-100a, i e =0 -50 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage bv ebo i e =-10a, i c =0 -5 v collector cutoff current i cbo v cb =-50v, i e =0 -0.1 a emitter cutoff current i ebo v eb =-5v, i c =0 -0.1 a dc current transfer ratio h fe v ce =-6v, i c =-2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 4 7 pf noise figure nf v ce =-6v,i c =-0.1ma,f=1khz,rg=10k 10 db 2SA1980UF sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type product specification 4008-318-123
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